A RADECS-sponsored Short Course
Multi-Scale, Multiphysics of Advanced Materials for Photonics and Microelectronics
June 23, 2025, Campus Manufacture, Room D03
8:30: Opening of Short Course
Session 1: From silica glasses to new materials (Chair: Youcef Ouerdane, UJM)
8:40 – 9:30: From silica to new materials
Marco Cannas & Simonpietro Agnello, Univ. Palermo, IT,
Abstract - Modern nanotechnologies have provided an important impetus for fundamental research on nanostructured systems that exhibit peculiar properties conferred by quantum confinement in the 0D, 1D and 2D dimensions, and by the high value of the specific surface area. Here we present an overview of the studies conducted on silica, i.e. a paradigmatic system for size-dependent properties, and on innovative materials such as graphene, 2D materials (MoS2, tansition metal dichalcogenides), ZnO and SiC, with modulable characteristics in multiple applications.
9:30 -10: 20: Point defects in silica glass
Linards Skuja, Univ. Latvia, LV
Abstract - The impact of point defects on present-day applications of silica glass will be outlined. The principal differences between the nature of point defects in glass and crystal, and their peculiarities in silica glass, compared to other glasses will be discussed. An updated overview on the presently known point defects will be given and the still existing controversies will be addressed.
Session 2: Experimental tools and techniques (Chair: Linards Skuja, Univ. Latvia)
10:50 – 11:30: Unveiling Defects in Silica Glasses with Electron Paramagnetic Resonance
Antonino Alessi, CEA-Polytechnique, Univ. Palermo
Abstract - The lecture illustrates the use of EPR a tool to investigate the defects in silica-based (SiO₂) glasses. EPR enables the detection and structural characterization of intrinsic and extrinsic paramagnetic defects in glasses and it has been largely used to study silica. The lecture will illustrate the main theoretical and practical aspects of this spectroscopic technique giving some example of how it has been or can be used.
11:30 – 12:10: Steady-State Spectroscopic Techniques
Adriana Morana, UJM, FR
Abstract - The lecture focuses on the spectroscopic techniques that can be employed to study the electronic and vibrational levels of a molecule. Whereas Raman spectroscopy or Infrared Absorption give information about the structure of the material under test, Optical Absorption and Photoluminescence allow to characterize the optical properties of the material. With a confocal microscope, the spatial distribution of some of the centers in the sample can be also investigated.
12:10 – 12:50: Reconstructing dynamics initiated by photo-excitation on the nanosecond and femtosecond time scales
Fabrizio Messina, Univ. Palermo, IT
Abstract - The lecture will focus on the use of time-resolved spectroscopic methods, ranging from the nanosecond to the femtosecond scale, to gain information of the characteristic relaxations of solid-state or liquid phase physical systems photo-excited by short pulses of light.
Session 3: Theoretical tools and techniques (Chair: Nicolas Richard, CEA DAM)
14:00 – 14:40: Radiation matter interactions in photonics and microelectronics: theory and tools
Damien Lambert, CEA DAM, FR
Abstract - In this course, after a brief description of the radiative environments of interest, we introduce the main mechanisms induced during irradiation in materials for photonics and microelectronics, according to the different particles classically encountered. The various methods and numerical tools for simulating these effects are presented.
14:40 – 15:20: Addressing Defect spectroscopic signatures, formation and interconversion mechanisms: Understanding, modelling and predicting
Layla Martin Samos, CNR-IOM, IT
Abstract - Defects lie at the very heart of modern technology. Whether they're introduced intentionally, sneak in during manufacturing, or emerge under real-world operating conditions, defects play a decisive role in shaping the opto-electronic behavior of semiconductors and insulators. They can boost free-carrier generation, act as efficient recombination centers, serve as pesky charge traps, or even lend materials their color by absorbing and emitting light. Now, over 70 years after the invention of the silicon transistor—and even longer since the debut of silica-based optical fibers—you might think we've figured it all out. Add to that the explosion of High Performance Computing and the rise of “push-button” first-principles modeling, and you’d be forgiven for wondering: why are we still talking about defects? Shouldn’t they be a solved problem by now? In this introductory lecture, we’ll explore why the answer is a resounding no. We'll present a critical overview of the theoretical and computational frameworks currently used to model and understand defects and their spectroscopic fingerprints. Special emphasis will be placed on cutting-edge first-principles methods for predicting optical properties. Throughout, theory and experiment will be placed in direct dialogue—sometimes harmonious, sometimes not—to illuminate both progress and pitfalls in the quest to tame defects.
15:20 – 16:00: Addressing Defect spectroscopic signatures, formation and interconversion mechanisms: sample applications in silica and silicon
Layla Martin Samos, CNR-IOM, IT
Abstract - In the second part of the short course, we’ll dive into practical examples showcasing how the optical fingerprints of defects in silicon and silica keep us computational folks gainfully employed. After all, when it comes to semiconductors and insulators, it's often the "dirt"—not the perfection—that makes things truly interesting.
16:30 – 17:10: Atomic displacements induced by radiations in materials : simulation methods and basic mechanisms
Thomas Jarrin, CEA DAM, FR
Abstract - The main methods to simulate atomic displacement induced by radiations are presented, their advantages and limits are clearly stated. The future challenges in the development of those methods are detailed, and insights into the basic mechanisms of defects creation following irradiation are presented for materials of interest for microelectronic applications.
Session 4: Radiation Effects (Chair: Aziz Boukenter, UJM)
17:10: – 17:50: Radiation effects on microelectronics
Ygor Aguiar, CERN, CH
Abstract - This course offers an overview of the fundamental concepts underlying radiation-induced failure mechanisms in electronic components operating in harsh environments, including space missions and particle accelerators. Topics will cover both stochastic effects, such as Single-Event Effects (SEEs), and cumulative dose effects. The course will also discuss mitigation strategies, including radiation-hardening-by-design (RHBD) and radiation-hardening-by-process (RHBP), providing insight into approaches for improving electronic system reliability in radiation environments.
17:50: – 18:30: Radiation effects on optical fibers
Sylvain Girard, UJM, FR
Abstract - This lecture will discuss how the point defects generated by ionizing radiation in the silica layers constituting the optical fibers will affect their macroscopic properties and performance in harsh environments. We'll discuss how the understanding of those basic mechanisms of defect generation and recombination could be exploited to either improve the radiation hardness of fiber-based solutions or to design radiation sensitive fibers for radiation detection and dosimetry.
End of short course
